Droplet Epitaxy
نویسندگان
چکیده
منابع مشابه
Complex Nanostructures by Pulsed Droplet Epitaxy
What makes three dimensional semiconductor quantum nanostructures so attractive is the possibility to tune their electronic properties by careful design of their size and composition. These parameters set the confinement potential of electrons and holes, thus determining the electronic and optical properties of the nanostructure. An often overlooked parameter, which has a...
متن کاملFabrication of GaAs Quantum Dots by Modified Droplet Epitaxy
We propose a modified droplet epitaxy method for fabricating self-organized GaAs/AlGaAs quantum dots (QDs) with a high As flux irradiation and a low substrate temperature. By our novel method, GaAs QDs were successfully formed, retaining their pyramidal shape, original base size and density of droplets, and preventing layer-by-layer growth. Quantum size effects of the QDs were distinctly observ...
متن کاملDroplet Epitaxy Image Contrast in Mirror Electron Microscopy
Image simulation methods are applied to interpret mirror electron microscopy (MEM) images obtained from a movie of GaAs droplet epitaxy. Cylindrical symmetry of structures grown by droplet epitaxy is assumed in the simulations which reproduce the main features of the experimental MEM image contrast, demonstrating that droplet epitaxy can be studied in real-time. It is therefore confirmed that a...
متن کاملCharacterization and density control of GaN nanodots on Si (111) by droplet epitaxy using plasma-assisted molecular beam epitaxy
In this report, self-organized GaN nanodots have been grown on Si (111) by droplet epitaxy method, and their density can be controlled from 1.1 × 10(10) to 1.1 × 10(11) cm(-2) by various growth parameters, such as substrate temperatures for Ga droplet formation, the pre-nitridation treatment of Si substrate, the nitridation duration for GaN crystallization, and in situ annealing after GaN forma...
متن کاملErratum to: Concentric Multiple Rings by Droplet Epitaxy: Fabrication and Study of the Morphological Anisotropy
C. Somaschini, S. Bietti, N. Koguchi, S. Sanguinetti (*) L-NESS and Dipartimento di Scienza dei Materiali, Universita’ di Milano Bicocca, Via Cozzi 53, 20125 Milano, Italy e-mail: [email protected] A. Fedorov CNISM, L-NESS and Dipartimento di Fisica del Politecnico di Milano, Via Anzani 42, 22100 Como, Italy Open Access This article is distributed under the terms of the Creati...
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ژورنال
عنوان ژورنال: Materia Japan
سال: 2014
ISSN: 1340-2625
DOI: 10.2320/materia.53.157